UPA1857GR-9JG-E1-A

UPA1857GR-9JG-E1-A

  • Description:MOSFET 2N-CH 60V 3.8A 8TSSOP
  • Series:-

SKU:0127118a2401 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 3.8A 8TSSOP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:3.8A
  • Rds On (Max) @ Id, Vgs:67mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:580pF @ 10V
  • Power - Max:1.7W
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package:8-TSSOP
  • Grade:-
  • Qualification:-

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UPA1857GR-9JG-E1-A

Overview

The UPA1857GR-9JG-E1-A is a dual N-channel power MOSFET from Renesas Electronics, housed in an 8-pin TOLL (TO-Leadless) surface-mount package. It features a logic-level gate drive capability and is designed for portable mechanical power applications. The device offers low on-resistance and optimized switching characteristics suitable for industrial and consumer use cases.

Feature Summary

  • Dual N-channel configuration within a single compact package
  • Logic-level gate drive compatibility for direct microcontroller interfacing
  • Optimized thermal performance via the leadless TOLL package design

Applications

  • Portable electronic device power management
  • Industrial control circuitry
  • Consumer electronics power stages

Procurement Notes

Verify component authenticity through official Renesas channels or authorized distributors. Confirm the specific suffix E1-A matches project requirements. Check current product status as listings may indicate obsolete status. Ensure compliance with RoHS standards and moisture sensitivity level specifications during storage and handling procedures.

Selection Notes

Select this component when a dual N-channel MOSFET solution is required for space-constrained designs. The TOLL package provides superior thermal dissipation compared to traditional leaded packages. Logic-level gate thresholds simplify driver circuit design. Evaluate total system power constraints against the 1.7W maximum power rating before implementation.

Part Context

This part belongs to the UPA1857GR series of automotive-grade power MOSFETs. The series includes derivatives such as the TOLT variant. Renesas classifies these products under standard quality grades unless explicitly specified otherwise in datasheets. The component represents a specialized solution for high-efficiency power switching in compact form factors.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Direct replacements must match the dual N-channel configuration and TOLL package dimensions. Verify that any alternative component maintains equivalent logic-level gate drive requirements and thermal performance characteristics for the intended application.

UPA1857GR-9JG-E1-AUPA1857GR-9JG-E1-A

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