UPA1873GR-9JG-E1-A

Description：MOSFET 2N-CH 20V 6A 8TSSOP
Series：-

SKU:7d99e7b252b9 Category: FET, MOSFET Arrays Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 6A 8TSSOP
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：6A
Rds On (Max) @ Id, Vgs：23mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：9nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds：705pF @ 10V
Power - Max：2W
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package：8-TSSOP
Grade：-
Qualification：-

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UPA1873GR-9JG-E1-A

Overview

The UPA1873GR-9JG-E1-A is an N-channel dual power MOSFET manufactured by Renesas Electronics Corporation. It features a drain-source voltage rating of 20V and a continuous drain current of 6.0A. The device exhibits a maximum on-resistance of 23.0 mΩ. It is housed in an 8-TSSOP surface-mount package designed for efficient thermal performance.

Feature Summary

Dual N-channel configuration within a single compact package
Low on-resistance for improved power efficiency
Surface-mount design optimized for automated assembly

Applications

DC motor control circuits
Power switching applications
Load management systems

Procurement Notes

Verify the specific suffix E1-A against the manufacturer's latest documentation to ensure compliance with current RoHS3 standards and labeling requirements. Confirm that the 8-TSSOP package matches the target PCB footprint and thermal dissipation needs before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel MOSFET solution is required for low-voltage, moderate-current applications. The 20V rating and 6.0A current capacity suit general-purpose switching tasks. Ensure the 23.0 mΩ on-resistance meets the system's power loss constraints.

Part Context

This part belongs to Renesas' discrete semiconductor product line, specifically focusing on power MOSFETs. It complements other low-voltage switching devices used in consumer electronics and industrial control systems where space-saving dual configurations are beneficial.

Replacement Considerations

Cross-reference with other 20V dual N-channel MOSFETs in 8-TSSOP packages. Verify pinout compatibility and electrical parameter equivalence, particularly regarding on-resistance and gate charge characteristics, before substituting.