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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 6A/5A 8PSOP
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6A, 5A
- Rds On (Max) @ Id, Vgs：27mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：748pF @ 10V
- Power - Max：2W
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package：8-PSOP
- Grade：-
- Qualification：-
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Overview
The UPA1890GR-9JG-E1-A is a dual power MOSFET array manufactured by Renesas Electronics Corporation. It integrates one N-channel and one P-channel field-effect transistor within a single surface-mount package. The device supports a maximum drain-source voltage of 30 V. Continuous drain current ratings are specified at 6 A for the N-channel configuration and 5 A for the P-channel configuration. The component utilizes an 8-pin PSOP (or TSSOP) leaded package, designed for compact circuit board layouts in consumer and industrial electronics applications.
Feature Summary
- Integrates complementary N-channel and P-channel power transistors into a single dual-array unit
- Optimized for surface-mount assembly to reduce footprint in dense electronic designs
- Supports standard industrial and consumer application environments with lead-free construction
Applications
- Consumer electronics power management circuits
- Industrial control system switching interfaces
- DC-DC converter input/output stages
Procurement Notes
Verify the specific datasheet revision and ordering suffix when sourcing this component. Confirm that the package type matches the required PCB footprint, as variations may exist between PSOP and TSSOP designations. Ensure compliance with RoHS directives and check moisture sensitivity levels for proper storage handling prior to assembly.
Selection Notes
Select this dual MOSFET array when space constraints require combining complementary switching elements. The 30 V rating suits low-voltage logic-level applications. Consider the distinct current capabilities of the N-channel (6 A) and P-channel (5 A) legs to ensure adequate thermal dissipation and load handling for the intended circuit topology.
Part Context
This component belongs to Renesas' discrete power transistor portfolio, specifically designed for general-purpose switching tasks. It serves as a compact alternative to using separate N-type and P-type MOSFETs, simplifying bill-of-materials and assembly processes for manufacturers of portable devices and embedded systems requiring efficient power control.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult official cross-reference tools or contact Renesas sales directly for verified equivalent components that match the electrical specifications and package dimensions.
