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The UPA1952TE-T1-A is a dual P-channel MOSFET manufactured by Renesas Electronics, housed in an SC-95 surface-mount package. It features logic-level gate operation with a 1.8V drive capability, making it suitable for low-voltage applications. The device supports a continuous drain current of 2A at 25°C and offers a maximum on-resistance of 135mΩ at 1A and 4.5V. Key electrical parameters include a drain-source voltage of 20V, a gate threshold voltage of 1.5V at 1mA, a maximum gate charge of 2.3nC at 4V, and an input capacitance of 272pF at 10V. The component operates within a temperature range up to 150°C and has a maximum power dissipation of 1.15W.
Verify the obsolete status of this component before initiating procurement processes. Confirm availability through authorized distributors or secondary market suppliers, as standard factory production may have ceased. Ensure that any sourced units match the original Renesas specifications and packaging requirements to maintain design integrity.
Select this component when a dual P-channel MOSFET with 1.8V logic compatibility is required in a small form factor. Consider the 20V voltage rating and 2A current capacity against load requirements. Evaluate the thermal performance given the 1.15W power dissipation limit in the SC-95 package for the specific application environment.
This part belongs to the Renesas discrete transistor portfolio, specifically designed for low-power switching applications. It represents a transition from older Intersil branding to the current Renesas Electronics identity. The SC-95 package provides a space-efficient solution for modern printed circuit board layouts.
Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status, alternative sourcing requires careful evaluation of pinout compatibility and electrical parameter equivalence.