UPA1981TE-T1-A

Overview

The UPA1981TE-T1-A is a dual-channel MOSFET array manufactured by Renesas Electronics Corporation. It integrates an N-channel and a P-channel power MOSFET within a single surface-mount package, specifically the SC-95 (TMM) configuration. The device is designed for low-voltage applications, featuring a drain-source voltage rating of 7V to 8V and a continuous drain current capacity of 2.8A. With a total power dissipation of 1W at ambient temperature, it offers a compact solution for switching tasks in consumer and industrial electronics where space efficiency and dual polarity control are required.

Feature Summary

• Integrates complementary N-channel and P-channel MOSFETs into a single dual-channel array for simplified circuit design.
• Utilizes a compact SC-95 surface-mount package to minimize board space requirements.
• Supports low-voltage operation with high current handling capabilities suitable for portable devices.

Applications

• Consumer electronic device power management
• Industrial control system switching
• Battery-powered equipment protection circuits

Procurement Notes

Verify component authenticity through authorized Renesas distributors or certified partners. Confirm that the received units match the specific UPA1981TE-T1-A marking and packaging specifications. Ensure storage conditions comply with moisture sensitivity levels to maintain reliability. Request batch-specific documentation to validate compliance with RoHS standards and lead-free requirements before integration into production lines.

Selection Notes

Select this component when a dual-switching solution is required in a minimal footprint. The integrated N/P-channel configuration eliminates the need for separate discrete components, reducing assembly complexity. Consider the 7V/8V voltage rating and 2.8A current limit to ensure compatibility with the target load requirements. The SC-95 package is suitable for automated surface-mount assembly processes.

Part Context

This part belongs to the UPA1981TE series of dual power MOSFET arrays from Renesas. It is distinct from RF small signal transistors like the UPA813T-T1-FB, which serve different frequency and power applications. The UPA1981TE series focuses on power switching rather than signal amplification, making it suitable for power delivery and load management roles in electronic systems.

Replacement Considerations

Publicly confirmed substitute part numbers for the UPA1981TE-T1-A are not available in the provided reference data. Engineers should consult official Renesas documentation or authorized distributor databases for cross-reference information. Verify pinout compatibility and electrical parameter equivalence before considering alternative manufacturers.

FAQ

What is the maximum drain-source voltage for the UPA1981TE-T1-A?

The device supports a drain-source voltage rating of 7V to 8V, as specified in the product description.

Does the UPA1981TE-T1-A contain both N-channel and P-channel transistors?

Yes, it is a dual-channel MOSFET array that integrates one N-channel and one P-channel power MOSFET.

What package type does the UPA1981TE-T1-A use?

It utilizes the SC-95 package, also referred to as TMM, which is a surface-mount configuration.