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The UPA2352T1P-E4-A is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 8 A at 25°C ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 9.6 mΩ when tested at a gate-source voltage (Vgs) of 10 V with an 8 A drain current. The gate threshold voltage (Vgs(th)) is specified as a maximum of 2.5 V at a gate current of 1 mA. The component is housed in an 8-DFN3333 (3.3x3.3 mm) surface-mount package, designed for efficient thermal dissipation and compact circuit layouts.
Verify the specific suffix E4 against official Renesas documentation to confirm exact electrical tolerances and tape-and-reel specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributors, as environmental declarations can vary by production batch and region. Ensure the supplier provides valid traceability documents matching the part number exactly.
Select this component for designs requiring a 30 V rating and 8 A continuous current capability within a small footprint. Compare the 9.6 mΩ Rds(on) specification against system loss requirements at the intended operating current. Verify that the 8-DFN3333 package thermal characteristics meet the PCB layout's heat dissipation capabilities for the target application environment.
This part belongs to Renesas' UPA series of N-channel MOSFETs, which are optimized for general-purpose power switching applications. The series typically offers a balance of low conduction losses and robust switching performance. The UPA2352 variant specifically targets compact power solutions where space constraints and thermal efficiency are critical design parameters.
Consult official Renesas substitution guides for verified equivalents. Cross-reference pinouts and thermal pad configurations carefully when considering third-party alternatives to ensure mechanical compatibility.