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Product Detailed Parameters
- Description：MOSFET N-CH DUAL LGA
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The UPA2374T1P-E1-A is a dual N-channel power MOSFET manufactured by Renesas Electronics. It integrates two independent channels within a single surface-mount package, designed for efficient switching applications. The device features a maximum drain current of 8 A per channel and a maximum power dissipation of 1.8 W. It operates reliably at junction temperatures up to 150 °C. The component utilizes metal-oxide semiconductor technology and is RoHS compliant. Its compact form factor supports high-density circuit board layouts while maintaining robust electrical performance for general-purpose power management tasks.
Feature Summary
- Dual-channel integration for space-efficient circuit design
- Surface-mount construction for automated assembly compatibility
- High thermal tolerance supporting elevated operating environments
Applications
- DC-DC converter circuits requiring dual switching elements
- Battery protection modules utilizing parallel or independent channel control
- General-purpose low-voltage power switching applications
Procurement Notes
Verify the specific suffix E1-A against the manufacturer's official datasheet to confirm pinout configuration and material compliance. Ensure the ordering code matches the exact package variant required for your PCB footprint. Cross-reference the Renesas part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel configuration is necessary to reduce board space compared to discrete single FETs. Evaluate the 8 A current rating against peak load requirements to ensure adequate headroom. Confirm that the 1.8 W power dissipation limit aligns with the thermal management capabilities of the target enclosure and PCB copper area.
Part Context
This part belongs to the UPA2374 series of dual power MOSFETs from Renesas. It serves as a compact alternative to using two separate single-channel transistors. The series is engineered for applications demanding moderate current handling in a small outline package, balancing electrical performance with physical size constraints in consumer and industrial electronics.
Replacement Considerations
Consult Renesas documentation for direct cross-references. Verify pin-to-pin compatibility and electrical parameter equivalence with any substitute dual N-channel MOSFETs from other manufacturers before implementation.
