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Product Detailed Parameters
- Description：MOSFET N-CH
- Series：-
- Mfr：Renesas
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The UPA2378T1P-E1-A is an N-channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) manufactured by Renesas Electronics. Designed for surface-mount applications, this component features a maximum continuous drain current of 8 A and a maximum power dissipation of 1.8 W. The device supports a maximum operating temperature of 150 °C and complies with RoHS standards. It utilizes a standard MOSFET technology suitable for general-purpose switching functions within electronic circuits.
Feature Summary
- N-channel configuration for efficient switching operations
- Metal-Oxide-Semiconductor construction for reliable performance
- Surface-mount design facilitating automated assembly processes
Applications
- General-purpose system control applications requiring low-power switching
- Electronic circuits utilizing N-channel MOSFET topology
- Consumer electronics components compatible with surface-mount technology
Procurement Notes
Verify the specific package type and pinout configuration against official Renesas documentation before integration. Confirm that the 1.8 W power dissipation rating aligns with the thermal management strategy of the target application. Ensure compliance with the 150 °C maximum operating temperature limit under expected load conditions to maintain device reliability and longevity.
Selection Notes
Select this component when an N-channel MOSFET with an 8 A drain current capacity is required for surface-mount designs. Consider the 1.8 W power dissipation limit and 150 °C thermal rating during circuit planning. This part is suitable for general-purpose switching tasks where standard MOSFET technology meets the electrical requirements of the system architecture.
Part Context
This component belongs to the discrete semiconductor transistor category, specifically within the field-effect transistor segment. Renesas Electronics produces this device as part of its portfolio of passive and active electronic components designed for various industrial and consumer applications. The product represents a standard solution for N-channel switching needs in modern electronic assemblies.
Replacement Considerations
Consult official Renesas replacement guides or distributor cross-reference lists for verified substitute part numbers. Ensure any alternative component matches the N-channel polarity, 8 A current rating, and surface-mount package specifications to maintain circuit functionality.
