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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 8.6A 6HWSON
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：8.6A
- Rds On (Max) @ Id, Vgs：17.5mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：6nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds：564pF @ 10V
- Power - Max：700mW
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：6-VFDFN Exposed Pad
- Supplier Device Package：6-HWSON
- Grade：-
- Qualification：-
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Overview
The UPA2450CTL-E1-A is a small-signal N-channel MOSFET array manufactured by Renesas Electronics Corporation. It features two independent elements in a common drain configuration with built-in diodes. The device supports a minimum breakdown voltage of 20V and handles a continuous current of 8.6A. Power dissipation is rated at 700mW. Key electrical parameters include an on-resistance of 17.5mΩ at 4A with a 4.5V gate drive, and a gate threshold voltage of 1.5V at 1mA input current. Typical input capacitance is 564pF.
Feature Summary
- Dual-element N-channel MOSFET array designed for efficient switching applications
- Common drain configuration integrated with built-in diodes for simplified circuit design
- Low on-resistance characteristics optimized for high-current performance within a compact surface-mount package
Applications
- Charge control switches for lithium-ion secondary batteries in notebook PCs
- Power management switches for AC adapter supply switching
- General industrial and consumer electronic switching circuits
Procurement Notes
Verify the specific ordering suffix to ensure compatibility with required packaging formats such as embossed tape. Confirm RoHS compliance status and lead-free specifications against current manufacturing standards. Check component availability as stock levels may vary across distributors. Ensure the source document explicitly lists this part number to avoid substitution errors during procurement.
Selection Notes
Select this component for applications requiring dual N-channel switching with low on-resistance. Consider the 20V breakdown voltage limit when designing power paths. Evaluate the 700mW thermal dissipation capability against expected load currents. Verify that the 1.5V gate threshold aligns with the driving logic levels available in the target system architecture.
Part Context
This component belongs to Renesas' lineup of low-loss P-channel and N-channel power MOSFETs. These devices utilize advanced fabrication processes to reduce on-resistance compared to previous generations. The series targets portable electronics and battery-powered systems where space efficiency and power management are critical design constraints.
Replacement Considerations
Public confirmed substitute part numbers are not provided in the available documentation. Users should consult official cross-reference guides or contact Renesas technical support for verified alternatives. Do not assume functional equivalence based solely on similar pin configurations or generic specifications.
