UPA2561T1H-T1-AT

Overview

The UPA2561T1H-T1-AT is a dual N-channel silicon power MOSFET array manufactured by Renesas Electronics. It features a maximum drain-source voltage of 20 V and a continuous drain current of 4.5 A. The device exhibits a low on-resistance of 0.065 ohms, ensuring efficient power handling with a maximum power dissipation of 2.2 W. Packaged in an 8-VSOF surface-mount format, it integrates two independent channels within a single component for compact circuit design.

Feature Summary

• Dual N-channel configuration for integrated switching applications
• Low on-resistance to minimize conduction losses
• Surface-mount packaging for automated assembly

Applications

• Power management circuits requiring dual channel isolation
• Battery protection modules
• DC-DC converter output stages

Procurement Notes

Verify the obsolete status through official Renesas channels before procurement planning. Confirm that the 8-VSOF package dimensions match the target PCB footprint. Ensure thermal management strategies account for the 2.2 W dissipation limit under expected load conditions.

Selection Notes

Select this component when a dual N-channel solution is required at 20 V with moderate current capabilities. Compare the 0.065 ohm resistance against alternative devices to ensure efficiency targets are met. Validate the VSOF-8 package compatibility with existing manufacturing equipment.

Part Context

This part belongs to the UPA2561 series of power MOSFET arrays. It serves as a discrete alternative to integrated driver solutions, providing raw switching elements for custom power topologies. The dual-channel architecture allows for synchronized or independent control of two loads within a single package.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.