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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 9A/8A 8PSOP
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：9A, 8A
- Rds On (Max) @ Id, Vgs：15.5mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1040pF @ 10V
- Power - Max：2W
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package：8-PSOP
- Grade：-
- Qualification：-
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Overview
The UPA2751GR-E1-AT is a dual N-channel power MOSFET array designed for automotive applications. It features an 8-lead SOIC package with a 175mil body width. The device operates at a maximum drain-source voltage of 30V and supports a continuous drain current of 9A. Key electrical characteristics include a typical on-resistance of 15.5mΩ at 4.5A and 10V, and a typical input capacitance of 1040pF. The component is lead-free and supplied in embossed tape packaging.
Feature Summary
- Dual N-channel configuration for efficient power switching
- Automotive-grade reliability and compliance
- Low on-resistance for high efficiency
- Lead-free construction
Applications
- Automotive power management systems
- High-side or low-side load switching
- Motor control circuits
- DC-DC converter stages
Procurement Notes
Verify the specific suffix 'E1-AT' to confirm the exact variant, as datasheets may reference the base model UPA2751GR. Confirm that the component status is acceptable for your design lifecycle, as some listings indicate this part may be obsolete. Ensure the embossed tape carrier type matches your automated assembly requirements. Cross-reference the pinout and thermal specifications against your PCB layout constraints before finalizing procurement.
Selection Notes
Select this component when a dual N-channel MOSFET solution is required for automotive environments. The 30V rating and 9A current capacity suit moderate power switching tasks. Consider the 15.5mΩ on-resistance for efficiency needs. The SOIC-8 package offers a balance of thermal performance and board space. Verify compatibility with your gate drive voltage levels, specifically the 10V threshold for optimal conduction.
Part Context
This part belongs to Renesas' Power MOSFETs for Automotive series. It is a dual FET array, distinct from single FET variants like the UPA2751GR-E1-A. The product line focuses on robust performance for vehicle electronics. The AT suffix typically denotes the tape-and-reel packaging format. This family supports various automotive power distribution and control applications requiring reliable switching.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Check Renesas official resources for direct replacements or obsolescence notices. Evaluate generic equivalents only if they match the 30V, 9A, dual N-channel specifications and SOIC-8 package dimensions precisely.
