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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.1A SC-74
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：100mA
- Rds On (Max) @ Id, Vgs：5Ohm @ 10mA, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：9pF @ 3V
- Power - Max：300mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-74, SOT-457
- Supplier Device Package：SC-74-6, (Mini Mold)
- Grade：-
- Qualification：-
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Overview
The UPA611TA-T1-A is a high-frequency NPN bipolar junction transistor manufactured by CEL, a Renesas Electronics brand. It is designed for RF applications and utilizes silicon technology. The device features a single configuration with a collector continuous current rating of 35 mA. It is housed in an SOIC-6 surface-mount package, suitable for automated assembly processes.
Feature Summary
- High-frequency performance optimized for RF signal processing
- NPN polarity construction using silicon technology
- Single configuration design for compact circuit integration
Applications
- RF amplifier stages
- High-frequency signal processing circuits
- Wireless communication modules
Procurement Notes
Verify the component status as End-of-Life (EOL) before procurement planning. Confirm availability through authorized distributors, noting potential supply restrictions. Ensure the SOIC-6 package matches the target PCB footprint. Validate RoHS compliance documentation against specific project requirements.
Selection Notes
Select this component for designs requiring discrete NPN transistors in small surface-mount packages. The 35 mA collector current limit defines the maximum load capability. Consider the SOIC-6 form factor for space-constrained layouts. Evaluate thermal management needs based on the specific power dissipation characteristics of the application.
Part Context
This component belongs to the portfolio of CEL, a brand under Renesas Electronics Corporation specializing in discrete semiconductors. It serves as a specialized RF solution within the broader discrete transistor category. The product line focuses on providing reliable components for high-frequency analog and radio frequency applications.
Replacement Considerations
Consult official manufacturer databases for confirmed substitute part numbers. Verify pinout compatibility and electrical specifications before substitution. Cross-reference with other high-frequency NPN transistors in the SOIC-6 package if direct replacements are unavailable.
