UPA672T-T1-A

Overview

The Renesas UPA672T-T1-A is a dual N-channel MOSFET in a SOT-363 package. It features a drain-source breakdown voltage of 50 V and a gate-source voltage range of -7 V to +7 V. The continuous drain current is rated at 100 mA. This super-mini-mold device integrates two MOS FET elements for high-density mounting.

Feature Summary

• Integrates two N-channel MOS FET elements within a single compact package
• Designed for high-density surface-mount applications to save mounting costs
• Provides a super-mini-mold form factor for efficient board space utilization

Applications

• High-density electronic circuit designs requiring compact switching solutions
• Surface-mount applications prioritizing space efficiency and cost reduction
• Low-current switching tasks utilizing dual MOS FET configurations

Procurement Notes

Verify the specific suffix 'T1' against official Renesas documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the SOT-363 footprint dimensions precisely. Cross-reference the 50V rating with system requirements to prevent overvoltage issues during operation.

Selection Notes

Select this component when dual N-channel switching is required in minimal space. The 100mA current rating suits low-power applications. Verify that the 50V breakdown voltage aligns with the circuit's maximum operating conditions. Consider the SOT-363 package constraints for thermal management and PCB layout.

Part Context

This part belongs to Renesas' discrete transistor portfolio, specifically focusing on small-signal MOS FETs. It complements other components by offering integrated dual functionality, reducing the need for separate single FETs and associated passive components in compact designs.

Replacement Considerations

Check for direct pin-compatible alternatives from Renesas or other manufacturers offering identical 50V/100mA dual N-channel specs in SOT-363. Ensure electrical parameters match exactly before substitution.