UPA800T-T1-A

Overview

The UPA800T-T1-A is a dual NPN silicon high-frequency transistor housed in an ultra-small S06 surface-mount package. It integrates two independent transistors (Q1 and Q2) within a 2 mm x 1.25 mm footprint, designed for low voltage and low current operation. Key electrical characteristics include a collector-emitter voltage (VCEO) of 10 V, a collector current (IC) limit of 35 mA, and a total power dissipation of 200 mW. The device exhibits a typical noise figure of 1.9 dB and a gain of 7.5 dB at 2 GHz under specific bias conditions.

Feature Summary

• Dual NPN configuration with independently mounted transistors
• Ultra-small 6-pin surface-mount package design
• Optimized for low voltage and low current performance

Applications

• Pager circuits
• Hand-held wireless applications
• Low-noise amplifier stages

Procurement Notes

Verify the exact ordering suffix against the manufacturer's official documentation to ensure correct packaging specifications. Confirm that the component meets all required environmental standards and RoHS compliance criteria before finalizing procurement orders.

Selection Notes

Select this component when a compact dual-transistor solution is required for RF front-end designs. Ensure the operating frequency range aligns with the specified gain bandwidth and scattering parameters. Verify that the thermal management strategy accommodates the specified power dissipation limits.

Part Context

This part belongs to the UPA series of RF bipolar transistors manufactured by California Eastern Laboratories. It is specifically engineered for portable communication devices where space constraints and power efficiency are critical design factors.

Replacement Considerations

Consult the manufacturer's datasheet for direct pin-compatible alternatives. Verify that any substitute maintains identical package dimensions and electrical ratings to ensure circuit compatibility.