UPA801T-A

Overview

The UPA801T-A is a twin NPN silicon bipolar transistor designed for ultra-high frequency applications. It integrates two NE856 devices within a single SOT-363 package. The component operates with a maximum collector-emitter voltage of 12 V and supports a continuous collector current of 100 mA. Key electrical characteristics include a typical transition frequency (fT) of 9.0 GHz at 7 mA, a noise figure of 1.2 dB at 1 GHz, and a maximum operating temperature of +150 °C.

Feature Summary

• Dual NPN configuration in a compact surface-mount package
• Ultra-high frequency operation capability up to 9 GHz
• Low noise performance suitable for sensitive receiver stages

Applications

• RF front-end modules
• Low noise amplifier circuits
• Wireless communication systems

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact specifications. Confirm RoHS compliance status through the relevant datasheet before integration into designs requiring environmental standards.

Selection Notes

Select this component when dual matched transistors are required for balanced RF circuit topologies. Ensure the design accommodates the 12 V voltage limit and 100 mA current rating while maintaining thermal management for the specified temperature range.

Part Context

This device belongs to the CEL Silicon Bipolar Transistor family, specifically utilizing the NE856 die structure. It serves as a discrete alternative to integrated MMICs where external biasing or specific gain configurations are preferred over fixed-gain amplifiers.

Replacement Considerations

The UPA810T-A is an officially documented equivalent part number within the same product line.