UPA810T-A

Overview

The UPA810T-A is an NPN silicon high-frequency transistor manufactured by CEL. It contains two independent transistors in a 2 mm x 1.25 mm SO6 package. Key electrical parameters include a collector current of 100 mA, collector-to-base voltage of 20 V, and collector-to-emitter voltage of 12 V. At 1 GHz with VCE = 3 V and IC = 7 mA, it provides a typical noise figure of 1.2 dB and insertion power gain of 9.0 dB. The gain bandwidth product is typically 4.5 GHz.

Feature Summary

• Dual NPN configuration within an ultra-small surface-mount package for compact system integration.
• Optimized for low-noise performance suitable for sensitive RF receiver stages.
• Capable of cascode or dual transistor configurations to enhance circuit flexibility.

Applications

• Hand-held wireless communication devices
• RF transmitter automatic gain control (AGC) stages
• Low-noise amplifier (LNA) input stages

Procurement Notes

Verify the specific ordering suffix required for your manufacturing process. The -A suffix indicates lead-free packaging, while -T1 denotes tape and reel quantities. Confirm availability status as components may be subject to discontinuation notices. Ensure the datasheet version matches the production batch specifications before finalizing procurement orders.

Selection Notes

Select this component when space constraints require a dual-transistor solution in an SO6 footprint. It is appropriate for designs needing high gain-bandwidth products around 4.5 GHz. Consider the 100 mA collector current limit for load requirements. Verify that the 12 V collector-to-emitter voltage rating aligns with the circuit's supply rails.

Part Context

This device belongs to the UPA810 series of high-frequency silicon transistors produced by CEL. It serves as a discrete alternative to integrated MMICs where discrete tuning or specific biasing is preferred. The dual-die construction allows for balanced differential circuits or cascaded amplification within a minimal board area.

Replacement Considerations

Direct replacements must match the SO6 package and NPN polarity. Verify that substitute parts meet the 4.5 GHz fT requirement and 1.2 dB noise figure at 1 GHz. Check if the replacement supports the same 100 mA continuous collector current rating without derating.

FAQ

What is the maximum operating frequency for this transistor?

The gain bandwidth product (fT) is typically 4.5 GHz, making it suitable for applications up to the UHF and lower microwave bands.

Can the two transistors be used independently?

Yes, each transistor is independently mounted and can be configured separately or combined for cascode operation.

What is the typical noise figure at 1 GHz?

The typical noise figure is 1.2 dB when measured at VCE = 3 V and IC = 7 mA.