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The UPA810T-T1-A is an NPN silicon RF small signal bipolar transistor manufactured by CEL. It is designed for high-frequency applications within the ultra-high frequency band. The device features a single configuration and supports a continuous collector current of 100 mA. It is housed in a surface-mount SOIC-6 package, suitable for automated assembly processes. This component is classified under RF bipolar transistors and utilizes silicon technology for its semiconductor structure.
Verify availability status carefully as this component is listed as obsolete or end-of-life by the manufacturer. Check for active stock with authorized distributors or consider alternative sourcing channels if immediate procurement is required. Confirm RoHS compliance details through official documentation before finalizing purchase decisions.
Select this component when an NPN RF bipolar transistor with 100 mA collector current rating is required in an SOIC-6 package. Ensure the application operates within the ultra-high frequency band specifications. Verify that the single configuration meets the circuit design requirements for the intended RF application.
This part belongs to the family of RF small signal bipolar transistors produced by CEL. It shares the general category characteristics of silicon-based RF devices but is distinct due to its specific NPN configuration and SOIC-6 surface-mount packaging format designed for high-frequency performance.
Publicly confirmed substitute part numbers are not available in the provided data. Consult manufacturer documentation for potential cross-references or contact technical support for approved alternatives.