UPA810T-T1

Description：RF TRANS 2 NPN 12V 4.5GHZ 6-SO
Series：-

SKU:8f4a4b1266f1 Category: Bipolar RF Transistors Brand: CEL

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Product introduction

Product Detailed Parameters

Description：RF TRANS 2 NPN 12V 4.5GHZ 6-SO
Series：-
Mfr：CEL
Package：Tape & Reel (TR)
Transistor Type：2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)：12V
Frequency - Transition：4.5GHz
Noise Figure (dB Typ @ f)：1.2dB ~ 2.5dB @ 1GHz
Gain：7dB ~ 9dB
Power - Max：200mW
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 7mA, 3V
Current - Collector (Ic) (Max)：100mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：6-SO
Grade：-
Qualification：-

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UPA810T-T1

Overview

The UPA810T-T1 is a dual NPN silicon high-frequency transistor encapsulated in an ultra-small 6-pin SMT package (2 mm x 1.25 mm). It features a typical noise figure of 1.2 dB and insertion power gain of 9.0 dB at 1 GHz. The device supports a maximum collector current of 100 mA with a collector-to-emitter voltage rating of 12 V. Electrical characteristics include a gain-bandwidth product of 4.5 GHz and a total power dissipation of 200 mW for two dies. Each transistor operates independently, allowing for dual or cascode configurations.

Feature Summary

Dual NPN transistors integrated into a compact 6-pin surface-mount package
Optimized for low noise figure and high gain performance at 1 GHz
Capable of independent operation or cascode configuration

Applications

Hand-held wireless communication devices
High-frequency signal amplification circuits
Low-voltage bias RF applications

Procurement Notes

Verify the specific ordering suffix to confirm packaging format. The UPA810T-T1 designation indicates taping products supplied on reels containing 3,000 pieces per reel. Loose product variants are available under different part numbers. Confirm lead-free status if required by checking for the -A suffix in the official documentation.

Selection Notes

Select this component when a small form factor is critical for high-frequency designs. The dual-transistor architecture allows designers to implement cascode stages within a minimal footprint. Ensure the circuit design accommodates the 12 V collector-to-emitter voltage limit and the 100 mA maximum collector current specification for reliable operation.

Part Context

This component belongs to the UPA810 series of silicon transistors manufactured by CEL. The series includes variations such as the UPA810TC-T1FB-A and UPA810T-A. These devices are designed for ultra-high frequency bands and utilize the NE856 die technology housed in the S06 package outline.