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The UPA811T-T1-A is an NPN silicon RF bipolar transistor manufactured by CEL. It is designed for high-frequency applications and features a single configuration. The device supports a continuous collector current of 35 mA and utilizes a surface-mount SOIC-6 package. This component is classified as an RF small signal transistor suitable for ultra-high frequency band operations.
Verify the End-of-Life (EOL) status before procurement, as the component is listed as discontinued. Confirm availability through authorized distributors or secondary markets. Ensure compatibility with existing SOIC-6 footprints if replacing active inventory. Check RoHS compliance details in the official datasheet to meet regulatory requirements for specific deployments.
Select this component for designs requiring an NPN RF bipolar transistor in an SOIC-6 package. Verify that the 35 mA collector current rating meets circuit demands. Consider the discontinuation status when planning long-term production. Evaluate alternative RF transistors from the same manufacturer family if supply stability is critical for the project lifecycle.
This part belongs to the UPA series of RF bipolar transistors produced by CEL. The series typically includes variants like the UPA802TC-T1FB, sharing similar silicon NPN technologies for high-frequency applications. These components are generally used in communication systems requiring small-signal amplification at ultra-high frequencies.
Direct substitutes may include other NPN RF transistors in SOIC-6 packages with comparable current ratings. Cross-reference with Renesas or NEC UPA series parts, such as the UPA802TC-T1FB, for pin-compatible alternatives. Verify electrical parameters match the original design requirements before substitution.