UPP1001E3/TR13

Overview

The UPP1001E3/TR13 is a silicon PIN diode manufactured by Microchip Technology, designed for RF and microwave applications. It operates with a maximum repetitive peak reverse voltage of 100V and a forward current rating of 250mA. The device features a low junction capacitance of 0.4pF at 0V reverse bias, ensuring minimal signal loss in high-frequency circuits. Packaged in the DO-216AA (SMB) surface-mount format, it supports a power dissipation of 2.5W and functions within a temperature range of -65°C to +175°C.

Feature Summary

• Utilizes silicon technology for robust RF switching and attenuation performance
• Optimized for high-frequency operation with ultra-low junction capacitance
• Engineered for high thermal stability across extended industrial temperature ranges

Applications

• RF switch circuits requiring fast recovery times
• Microwave attenuator networks
• Phase shifters in communication systems
• High-frequency signal routing modules

Procurement Notes

Verify the component designation against official Microchip Technology datasheets to confirm the specific electrical characteristics and package dimensions. Ensure that the ordering suffix matches the required reel quantity specifications. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.

Selection Notes

Select this component when designing circuits that demand precise control over RF signals with minimal insertion loss. The low capacitance characteristic makes it suitable for frequencies where standard diodes would introduce excessive reactance. Consider the thermal management requirements given the 2.5W power dissipation capability and the operating temperature limits defined in the technical documentation.

Part Context

This part belongs to the UPP series of PIN diodes from Microchip Technology, which are specialized for radio frequency applications. The series is characterized by its ability to handle high-frequency signals efficiently while maintaining structural integrity under varying thermal conditions. It serves as a critical passive component in modern wireless infrastructure and test equipment.

Replacement Considerations

Consult official Microchip Technology substitution guides for verified equivalent parts. Do not assume compatibility based solely on package similarity; verify electrical parameters such as junction capacitance and reverse voltage ratings against the original design requirements.