US6K4TR

Overview

The US6K4TR is a dual N-channel MOSFET manufactured by Rohm Semiconductor, designed for low-voltage drive applications. It features a TUMT6 surface-mount package with six terminals. The device supports a drain-source voltage of 30V and a continuous drain current of 1.5A. Typical on-resistance values are 0.27Ω at 4V gate drive and 0.25Ω at 4.5V gate drive. Total gate charge is typically 1.4nC. Power dissipation is rated at 1W, with an operating temperature range from -55°C to +150°C.

Feature Summary

• Optimized for 4V drive voltage operation to facilitate compatibility with low-power logic interfaces.
• Dual N-channel configuration within a compact surface-mount footprint for space-constrained designs.
• Fast switching characteristics enabled by low total gate charge.

Applications

• Low-side switching in battery-powered portable devices
• Load switching in automotive electronics requiring 4V logic compatibility
• Power management circuits in industrial control systems

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for obsolescence notices, as this part may be restricted for new designs. Ensure storage conditions adhere to moisture sensitivity level requirements prior to soldering.

Selection Notes

Select the US6K4TR when a dual N-channel MOSFET with 4V drive capability is required. Compare on-resistance and gate charge against alternatives if higher efficiency or faster switching speeds are critical. Verify package compatibility with existing PCB footprints before integration.

Part Context

This component belongs to Rohm's series of dual N-channel MOSFETs optimized for low-voltage driving. It shares the TUMT6 package form factor with other variants in the family, offering a standardized solution for compact power switching applications across consumer and industrial sectors.

Replacement Considerations

The UT6K3 is listed as a similar specification replacement option. Verify pinout compatibility and electrical parameters before substitution.