US6M1TR

Overview

The US6M1TR is a dual complementary MOSFET from ROHM Semiconductor, integrating one N-channel and one P-channel enhancement-mode transistor in a SOT-363T (TUMT6) surface-mount package. It features a drain-source voltage of 30V for the N-channel and 20V for the P-channel, with continuous drain currents of 1A and 1.4A respectively. The device offers low on-resistance of 0.27 Ohms at 4V gate drive and total gate charge of 1.4nC. Power dissipation is rated at 1W, operating within a temperature range of -55°C to +150°C.

Feature Summary

• Complementary N+P configuration optimized for low-voltage driving
• Fast switching characteristics suitable for high-speed applications
• Compact SOT-363T surface-mount packaging for space-constrained designs

Applications

• Low-frequency amplifier drivers
• General-purpose switching circuits
• Battery-powered portable devices

Procurement Notes

Verify supply status before design finalization as this component may be designated not recommended for new designs. Confirm RoHS compliance and specific ordering suffixes such as TR for tape-and-reel packaging. Ensure compatibility with existing inventory if replacing older variants. Check official datasheets for any updates regarding lead times or alternative recommendations.

Selection Notes

Select based on required drive voltage levels, noting the 4V N-channel and 2.5V P-channel optimization. Compare on-resistance values against thermal constraints in your application. Consider the small signal nature and power dissipation limits when designing heat management solutions. Verify package dimensions match PCB footprint requirements.

Part Context

Part of the US6M series of complementary MOSFETs designed for efficient switching in low-power applications. The US6M1TR variant specifically targets cost-sensitive and space-limited consumer electronics where fast switching and low on-resistance are critical performance factors.

Replacement Considerations

US6M2TR is listed as a similar specification replacement option. Verify pinout compatibility and electrical parameter differences before substitution. Ensure the alternative meets all original design constraints including package size and thermal performance.