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Product Detailed Parameters
- Description：MOSFET 2P-CH 40V 3.5A HUML2020L8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
- Rds On (Max) @ Id, Vgs：122mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：6.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：265pF @ 20V
- Power - Max：2W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-PowerUDFN
- Supplier Device Package：HUML2020L8
- Grade：-
- Qualification：-
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Overview
The UT6JB5TCR is a dual P-channel MOSFET array manufactured by ROHM Semiconductor, designed for surface-mount applications. It features a DFN2020-8D package and utilizes silicon technology. Key electrical parameters include a drain-source breakdown voltage of 40 V and a continuous drain current of 3.5 A. The device exhibits a maximum on-resistance of 170 mOhms per channel. Gate-source voltage limits are specified at ±20 V, with a threshold voltage typically around 2.5 V. Total power dissipation is rated at 2 W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual P-channel configuration integrated into a compact surface-mount footprint
- Enhancement mode operation suitable for low-side switching applications
- High thermal performance with a maximum junction temperature rating of 150°C
Applications
- DC motor control circuits
- Power switch management in portable devices
- Battery protection modules
Procurement Notes
Verify the specific suffix 'TCR' against the official ROHM datasheet to confirm tape-and-reel packaging specifications. Ensure that the requested quantity aligns with standard reel sizes or cut-tape availability. Cross-reference the RoHS compliance status directly with the manufacturer's latest documentation to guarantee regulatory adherence for the intended market.
Selection Notes
Select this component when a dual P-channel solution is required within a DFN2020-8D form factor. Evaluate the 40V breakdown voltage and 3.5A current capacity against circuit load requirements. Consider the 170 mOhm on-resistance for efficiency calculations. Confirm compatibility with standard SMD assembly processes and thermal management constraints inherent to the small outline package.
Part Context
This part belongs to ROHM’s discrete semiconductor portfolio, specifically within the MOSFET category. It is engineered for power management and switching tasks in consumer electronics and industrial systems. The DFN2020-8D package provides a balance between electrical performance and board space efficiency, supporting modern miniaturization trends in electronic design.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult ROHM’s official cross-reference tools or contact technical support for verified alternatives that match the pinout, voltage ratings, and package dimensions.
