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The UT6JC5TCR is a dual P-channel power MOSFET manufactured by ROHM Semiconductor, housed in a DFN2020-8D surface-mount package. It features a drain-source voltage of -60 V and a continuous drain current of -2.5 A. The device exhibits a typical on-resistance of 0.25 Ω at VGS = -4.5 V and 0.22 Ω at VGS = -10 V. Total gate charge is specified at 3.2 nC, with a maximum power dissipation of 2 W. Operating temperatures range from -55°C to +150°C.
Verify the specific suffix 'TCR' against the manufacturer's official datasheet to confirm reel packaging specifications and tape-and-reel dimensions. Ensure compatibility with automated pick-and-place equipment requirements. Cross-reference the RoHS compliance status directly with the latest product announcement or certificate provided by ROHM Semiconductor before finalizing procurement orders.
Select this component when a dual P-channel topology is required within a minimal footprint. The -60V rating suits low-voltage DC systems. Evaluate the 0.25Ω RDS(on) against thermal constraints for the intended load current. Confirm that the driving circuit can provide sufficient negative gate-source voltage to fully enhance the channels and minimize conduction losses effectively.
This part belongs to ROHM's DFN2020 series of dual MOSFETs, designed for high-density PCB layouts. It complements other variants in the lineup such as the UT6JE5TCR and UT6K3TCR1, offering distinct voltage and current ratings tailored for different power levels while maintaining consistent package dimensions for design flexibility.
Direct substitutes include the UT6JC5 (without suffix) if lead-free plating and packaging formats are compatible. Verify pinout alignment and electrical parameters against alternatives like the UT6JA3TCR or UT6ME5, ensuring voltage and current ratings meet or exceed original design requirements.