UT6JC5TCR

UT6JC5TCR

$0.71
  • Description:MOSFET 2P-CH 60V 2.5A HUML2020L8
  • Series:-

SKU:26767ebe207d Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 60V 2.5A HUML2020L8
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
  • Rds On (Max) @ Id, Vgs:280mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:6.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:265pF @ 30V
  • Power - Max:2W (Ta)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-PowerUDFN
  • Supplier Device Package:HUML2020L8
  • Grade:-
  • Qualification:-

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UT6JC5TCR

Overview

The UT6JC5TCR is a dual P-channel power MOSFET manufactured by ROHM Semiconductor, housed in a DFN2020-8D surface-mount package. It features a drain-source voltage of -60 V and a continuous drain current of -2.5 A. The device exhibits a typical on-resistance of 0.25 Ω at VGS = -4.5 V and 0.22 Ω at VGS = -10 V. Total gate charge is specified at 3.2 nC, with a maximum power dissipation of 2 W. Operating temperatures range from -55°C to +150°C.

Feature Summary

  • Dual P-channel configuration integrated into a compact DFN2020-8D surface-mount package for space-constrained designs.
  • Low on-resistance characteristics optimized for efficient switching performance under standard drive voltages.
  • Robust thermal management capabilities supporting high junction temperatures up to 150°C.

Applications

  • General-purpose switching circuits requiring dual P-channel control
  • Power management modules for consumer electronics
  • Load switch applications in portable devices

Procurement Notes

Verify the specific suffix 'TCR' against the manufacturer's official datasheet to confirm reel packaging specifications and tape-and-reel dimensions. Ensure compatibility with automated pick-and-place equipment requirements. Cross-reference the RoHS compliance status directly with the latest product announcement or certificate provided by ROHM Semiconductor before finalizing procurement orders.

Selection Notes

Select this component when a dual P-channel topology is required within a minimal footprint. The -60V rating suits low-voltage DC systems. Evaluate the 0.25Ω RDS(on) against thermal constraints for the intended load current. Confirm that the driving circuit can provide sufficient negative gate-source voltage to fully enhance the channels and minimize conduction losses effectively.

Part Context

This part belongs to ROHM's DFN2020 series of dual MOSFETs, designed for high-density PCB layouts. It complements other variants in the lineup such as the UT6JE5TCR and UT6K3TCR1, offering distinct voltage and current ratings tailored for different power levels while maintaining consistent package dimensions for design flexibility.

Replacement Considerations

Direct substitutes include the UT6JC5 (without suffix) if lead-free plating and packaging formats are compatible. Verify pinout alignment and electrical parameters against alternatives like the UT6JA3TCR or UT6ME5, ensuring voltage and current ratings meet or exceed original design requirements.

UT6JC5TCRUT6JC5TCR
$0.71
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