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The UT6K30TCR1 is a dual N-channel power MOSFET manufactured by ROHM Semiconductor. It features a low on-resistance and is housed in a small surface-mount HUML2020L8 package. The device supports a drain-source voltage of 60V and a continuous drain current of 3A. Power dissipation is rated at 2W, with an operating temperature range from -55°C to +150°C. This component is designed for switching applications and DC-DC converters.
Verify the Not Recommended for New Design (NRND) status before implementation. Confirm availability through authorized distributors as stock may be limited. Ensure the HUML2020L8 package dimensions match your PCB footprint requirements. Check RoHS compliance details if required for your specific manufacturing standards.
Select this component when a dual N-channel MOSFET is required in a minimal footprint. Consider the 60V rating and 3A current capacity against your circuit load. Evaluate thermal management needs given the 2W power dissipation limit in the small package. Compare against other ROHM series for alternative voltage or current ratings.
This part belongs to the UT6K series of dual MOSFETs from ROHM Semiconductor. It shares the HUML2020L8 package form factor with other variants in the lineup. The series targets space-constrained designs requiring dual channel functionality. It complements ROHM's portfolio of surface-mount power devices.
Public confirmed substitute part numbers are not available in the provided documentation.