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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 5A HUML2020L8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Rds On (Max) @ Id, Vgs：48mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：3.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：150pF @ 20V
- Power - Max：2W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-PowerUDFN
- Supplier Device Package：HUML2020L8
- Grade：-
- Qualification：-
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Overview
The UT6KB5TCR is a dual N-channel enhancement-mode Power MOSFET manufactured by ROHM Semiconductor. It features a DFN2020-8D surface-mount package with dimensions of 2.0x2.0 mm and a thickness of 0.65 mm. The device supports a drain-source voltage (Vds) of 40 V and a continuous drain current (Id) of 5 A. Key electrical parameters include a typical on-resistance (Rds(on)) of 48 mΩ at Vgs = 4.5 V, a gate charge (Qg) of 3.5 nC, and a power dissipation rating of 2 W. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in a compact DFN2020-8D surface-mount package
- Low on-resistance for efficient switching performance
- Enhancement mode operation with defined threshold voltage characteristics
Applications
- Switching applications in small mobile devices
- Power management circuits requiring low profile components
- General purpose transistor arrays for signal or power switching
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors. Ensure design-in compatibility with the specified DFN2020-8D footprint and thermal requirements before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel MOSFET solution is required within a 2.0x2.0 mm footprint. The 40V rating and 5A current capacity suit low-voltage power switching tasks. Consider the 48 mΩ on-resistance for efficiency needs and verify that the 2W power dissipation aligns with the target application's thermal management capabilities.
Part Context
This part belongs to ROHM's UT6K series of small-sized MOSFETs designed for mobile devices. The series emphasizes miniaturization while maintaining high current handling capabilities. The UT6KB5TCR specifically utilizes silicon technology and offers a standard-grade option suitable for general consumer electronics applications outside of automotive environments.
Replacement Considerations
Consult the manufacturer's official substitution guide for verified alternatives. Cross-reference pinouts and electrical ratings carefully if considering equivalent parts from other manufacturers.
