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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 4A HUML2020L8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Rds On (Max) @ Id, Vgs：46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：4.3nC @ 10V, 6.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：180pF @ 15V, 305pF @ 15V
- Power - Max：2W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-PowerUDFN
- Supplier Device Package：HUML2020L8
- Grade：-
- Qualification：-
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Overview
The UT6MA2TCR is a dual complementary MOSFET from ROHM Semiconductor, integrating an N-channel and a P-channel device in a single DFN2020-8D package. Designed for low-voltage applications, it features a drain-source breakdown voltage of 30V for the N-channel and 20V for the P-channel. The component supports a continuous drain current of 1.5A (N-ch) and 5.5A (P-ch). It is optimized for low-drive operation with a typical Rds(on) of 0.24Ω at 2.5V gate drive for the N-channel and 0.045Ω at 4V for the P-channel. The unit operates within a temperature range of -55°C to +150°C and dissipates up to 2W of power.
Feature Summary
- Integrated dual complementary configuration combining N-channel and P-channel MOSFETs in a compact footprint.
- Optimized for low-voltage drive applications with specified on-resistance performance at 2.5V and 4V gate voltages.
- High thermal stability supporting extended operating temperatures up to 150°C.
Applications
- Low-voltage DC-DC converter circuits
- Motor driver interfaces
- Power management units for portable electronics
Procurement Notes
Verify the specific ordering suffix to ensure the correct tape-and-reel packaging quantity of 3000 units. Confirm RoHS compliance status through official datasheets prior to integration. Check current supply status as product availability may vary by region and distributor channel.
Selection Notes
Select this component for designs requiring space-constrained complementary switching with low gate drive requirements. Ensure the application voltage does not exceed the 30V N-channel or 20V P-channel ratings. Verify that the required current capacity aligns with the 1.5A and 5.5A limits under expected thermal conditions.
Part Context
This part belongs to ROHM's series of low-voltage complementary MOSFETs designed for efficient power switching in small packages. It serves as a direct replacement for legacy parts like the US6M2, offering improved performance in modern compact electronic systems requiring dual-channel control.
Replacement Considerations
The UT6MA3TCR is listed as a similar specification alternative. Verify pinout compatibility and electrical parameter alignment before substitution. The US6M2 is noted as not recommended for new designs but may serve as a legacy reference.
