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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 5A HUML2020L8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：5A, 5.5A
- Rds On (Max) @ Id, Vgs：59mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：6.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：460pF @ 10V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-PowerUDFN
- Supplier Device Package：HUML2020L8
- Grade：-
- Qualification：-
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Overview
The UT6MA3TCR is a dual complementary N-channel and P-channel MOSFET array manufactured by ROHM Semiconductor. It is housed in an 8-terminal DFN2020-8D package with dimensions of 2.0x2.0 mm and a thickness of 0.65 mm. The device supports a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 5.5 A. Typical on-resistance (Rds(on)) values are 0.045 Ω at a gate-source voltage (Vgs) of 2.5 V, 0.03 Ω at 4.5 V, and 0.045 Ω at the drive voltage. The total gate charge (Qg) is typically 4 nC, and power dissipation (Pd) is rated at 2 W. Storage temperature ranges from -55°C to +150°C.
Feature Summary
- Integrated complementary N-channel and P-channel configuration within a single compact surface-mount package.
Applications
- Power supply circuits
Procurement Notes
Verify the specific ordering suffix against official ROHM documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and ensure the component meets the required storage temperature range for the intended environment. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.
Selection Notes
Select this component for applications requiring low on-resistance at low gate drive voltages, specifically around 2.5 V. Ensure the design accommodates the 2 W power dissipation limit and the thermal characteristics of the DFN2020-8D package. Verify that the 20 V breakdown voltage and 5.5 A current rating align with the circuit requirements.
Part Context
The UT6MA3TCR belongs to the UT6MA series of complementary MOSFETs designed for switching applications. It serves as the tape-and-reel variant of the UT6MA3 standard product. This series is engineered to provide low on-resistance and fast switching capabilities in a small footprint suitable for portable and space-constrained electronic devices.
Replacement Considerations
The UT6M2 is listed as a similar specification replacement option, though it features different electrical parameters and a SOT-363T package. Verify compatibility regarding pinout, voltage ratings, and thermal performance before substitution.
