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Product Detailed Parameters
- Description：MOSFET 60V 3.5A HUML2020L8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：3.5A (Ta), 2.5A (Ta)
- Rds On (Max) @ Id, Vgs：95mOhm @ 3.5A, 10V, 280mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：2W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-PowerUDFN
- Supplier Device Package：HUML2020L8
- Grade：-
- Qualification：-
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Overview
The UT6MC5TCR is a dual-channel power MOSFET manufactured by ROHM Semiconductor, integrating one N-channel and one P-channel transistor within a single HUML2020L8 (DFN2020-8D) surface-mount package. The N-channel device supports a drain-source voltage of 60V with a continuous current of ±3.5A, while the P-channel device handles -60V at ±2.5A. Maximum on-state resistances are specified at 95mΩ for the N-channel and 280mΩ for the P-channel. The component operates across a junction temperature range of -55°C to +150°C with a total power dissipation rating of 2.0W.
Feature Summary
- Integrates complementary N-channel and P-channel transistors in a compact DFN2020-8D footprint
- Optimized low on-resistance characteristics for efficient switching performance
- Manufactured using lead-free plating compliant with RoHS directives
- Constructed with halogen-free materials for environmental safety
Applications
- General-purpose switching circuits
- DC/DC converter topologies
- Motor drive pre-driver stages
- Power management modules for consumer electronics
Procurement Notes
Verify the specific ordering suffix against official ROHM documentation to confirm packaging details such as tape width and reel size. Ensure that the procurement channel provides valid traceability data matching the manufacturer's specifications. Confirm compliance with current environmental standards before finalizing acquisition.
Selection Notes
Select this component when a compact dual-transistor solution is required for 60V applications. Evaluate thermal resistance constraints carefully, as the small package limits heat dissipation capabilities. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-state resistance performance.
Part Context
This part belongs to the ROHM UT6 series of dual MOSFETs designed for space-constrained designs. It serves as an alternative to discrete transistor pairs, reducing board area and simplifying assembly processes for standard electronic equipment applications.
Replacement Considerations
Consult the official datasheet for direct pin-compatible substitutes within the same voltage class. Verify that any replacement maintains identical package dimensions and electrical parameters to ensure circuit compatibility.
