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The UTV200 is an NPN bipolar RF transistor manufactured by Microsemi Corporation, designed for high-power applications. It operates within a frequency range of 470MHz to 860MHz and supports a maximum collector current of 4.5A. The device features a maximum power dissipation of 80W and a collector-emitter breakdown voltage of 28V. It utilizes the 55JV chassis mount package and offers a typical gain of 8.5dB to 9.5dB.
Verify component authenticity through authorized Microchip distributors. Confirm package integrity upon receipt, as the 55JV chassis mount requires careful handling. Ensure compliance with RoHS standards if required by project specifications. Cross-reference datasheet revisions to confirm electrical characteristics match design requirements before integration.
Select this component when high output power at VHF frequencies is required. The 55JV package facilitates direct heatsink mounting for efficient thermal dissipation. Evaluate thermal resistance requirements against system constraints. Consider the 28V breakdown limit for circuit design safety margins. Compare gain specifications against alternative devices for efficiency optimization.
The UTV200 belongs to Microsemi's UTV series of bipolar RF transistors. This family includes variants like the UTV020, which offers lower power ratings but similar frequency coverage. The series targets robust performance in demanding RF environments where reliability and thermal stability are critical for continuous operation.
Direct substitutes include other UTV series transistors such as the UTV020, though power ratings differ significantly. Verify pinout compatibility and thermal interface dimensions when replacing with similar chassis-mount devices from other manufacturers.