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VB60120C-E3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 120V 30A TO263AB. Review the specifications below when checking this part for your BOM.
The VB60120C-E3/8W is a dual high-voltage Trench MOS Barrier Schottky rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration with a maximum repetitive peak reverse voltage of 120 V and an average forward rectified current of 30 A per diode. The component utilizes TO-263AB (D2PAK) surface-mount packaging and operates within a junction temperature range of -40 °C to +150 °C.
Verify the specific package variant, as the datasheet lists both tube and tape-and-reel options for this base part number. Confirm that the E3 suffix aligns with required environmental compliance standards. Ensure the TO-263AB footprint matches the target PCB layout before finalizing procurement orders.
Select this component for applications requiring high-frequency switching capabilities and efficient power conversion. The TMBS technology offers superior performance compared to standard Schottky diodes. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values under expected load conditions.
This device belongs to the V60120C/VB60120C series of dual high-voltage Trench MOS Barrier Schottky rectifiers. The 'VB' prefix specifically designates the D2PAK (TO-263AB) surface-mount package variant, distinguishing it from the through-hole TO-220AB version designated by the 'V' prefix.
Direct substitutes include the V60120C-E3/4W for through-hole applications or other VB60120C variants with different packaging codes such as /4W. Verify pinout compatibility and thermal characteristics when replacing components in existing designs.
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