Diode Arrays VB60120C-E3/8W product image

VB60120C-E3/8W

$2.82
  • Description:DIODE ARR SCHOT 120V 30A TO263AB
  • Series:TMBS®

SKU:c59aeae457fa Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

VB60120C-E3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 120V 30A TO263AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for VB60120C-E3/8W

  • Description:DIODE ARR SCHOT 120V 30A TO263AB
  • Series:TMBS®
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):120 V
  • Current - Average Rectified (Io) (per Diode):30A
  • Voltage - Forward (Vf) (Max) @ If:950 mV @ 30 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:500 µA @ 120 V
  • Operating Temperature - Junction:-40°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB (D2PAK)
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for VB60120C-E3/8W

VB60120C-E3/8W

Diode Arrays Overview

The VB60120C-E3/8W is a dual high-voltage Trench MOS Barrier Schottky rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration with a maximum repetitive peak reverse voltage of 120 V and an average forward rectified current of 30 A per diode. The component utilizes TO-263AB (D2PAK) surface-mount packaging and operates within a junction temperature range of -40 °C to +150 °C.

Diode Arrays Feature Summary

  • Trench MOS Schottky technology for low forward voltage drop and reduced power losses
  • High efficiency operation combined with low thermal resistance
  • Compliant with RoHS directives and free from halogenated substances

Diode Arrays Applications

  • High frequency converters
  • Switching power supplies
  • Freewheeling diodes
  • OR-ing diode circuits
  • Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific package variant, as the datasheet lists both tube and tape-and-reel options for this base part number. Confirm that the E3 suffix aligns with required environmental compliance standards. Ensure the TO-263AB footprint matches the target PCB layout before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component for applications requiring high-frequency switching capabilities and efficient power conversion. The TMBS technology offers superior performance compared to standard Schottky diodes. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values under expected load conditions.

Diode Arrays Part Context

This device belongs to the V60120C/VB60120C series of dual high-voltage Trench MOS Barrier Schottky rectifiers. The 'VB' prefix specifically designates the D2PAK (TO-263AB) surface-mount package variant, distinguishing it from the through-hole TO-220AB version designated by the 'V' prefix.

Diode Arrays Replacement Considerations

Direct substitutes include the V60120C-E3/4W for through-hole applications or other VB60120C variants with different packaging codes such as /4W. Verify pinout compatibility and thermal characteristics when replacing components in existing designs.

VB60120C-E3/8WVB60120C-E3/8W
$2.82
Buy Now