VBT1045CBP-M3/8W

Diode Arrays Overview

The VBT1045CBP-M3/8W is a dual common cathode Trench MOS Barrier Schottky rectifier in a D2PAK (TO-263AB) package. It features a maximum repetitive peak reverse voltage of 45 V and a total average forward rectified current of 10 A, split as 5 A per diode. The device supports a peak forward surge current of 100 A. Forward voltage drop is rated at 0.49 V typical at 5.0 A. Operating junction temperature reaches 200 °C under DC forward current conditions without reverse bias.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve ultra-low forward voltage drop for high efficiency operation.
• Capable of withstanding a maximum junction temperature of 200 °C specifically for solar bypass mode applications.
• Complies with MSL level 1 requirements and passes JESD 201 class 1A whisker testing.

Diode Arrays Applications

• Solar cell junction box bypass diode protection
• Photovoltaic panel energy harvesting circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix /8W to confirm tape and reel packaging containing 800 units per reel. Confirm compliance with halogen-free and RoHS standards via the M3 designation. Validate thermal equilibrium ratings against actual heatsinking configurations before deployment.

Diode Arrays Selection Notes

Select this component when low forward voltage drop is critical for minimizing power losses in photovoltaic systems. Ensure the application environment allows for a maximum operating case temperature of 150 °C or manages the junction temperature up to 200 °C during continuous DC forward conduction periods.

Diode Arrays Part Context

This part belongs to the VBT series of Trench MOS Barrier Schottky Rectifiers manufactured by Vishay General Semiconductor - Diodes Division. It is designed specifically for high-efficiency power management in renewable energy sectors, offering superior thermal performance compared to standard silicon rectifiers.

Diode Arrays Replacement Considerations

VBT1045CBP-M3/4W

Diode Arrays FAQ

What is the maximum junction temperature allowed?

The maximum junction temperature is 200 °C when operating in DC forward current mode without reverse bias.

How is the forward current distributed?

The device has a total average forward rectified current of 10 A, which is divided into 5 A per diode in the common cathode configuration.

Does the component meet moisture sensitivity level requirements?

Yes, it meets MSL level 1 per J-STD-020 with an LF maximum peak of 245 °C.