VEC2401-TL-E

$0.14

Description：NCH+NCH 2.5V DRIVE SERIES
Series：*

SKU:eae1fc2e6546 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：NCH+NCH 2.5V DRIVE SERIES
Series：*
Mfr：onsemi
Package：Bulk
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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VEC2401-TL-E

Overview

The VEC2401-TL-E is an N-channel silicon MOSFET designed for general-purpose switching applications. It features a composite structure with two internal transistors in an 8-pin package, facilitating high-density mounting. The device supports 2.5V drive levels and offers low ON-resistance. Key electrical parameters include a drain-to-source voltage of 20 V, a DC drain current of 4.5 A, and a pulse drain current of 18 A. The maximum allowable power dissipation is 0.9 W, with a channel temperature rating up to 150 °C.

Feature Summary

Composite type facilitating high-density mounting
Low ON-resistance
2.5V drive capability

Applications

Load switching applications

Procurement Notes

Verify the manufacturer origin carefully, as the datasheet identifies SANYO Semiconductor while the model suffix implies onsemi distribution. Confirm the specific ordering number ENA0264 matches your supply chain requirements. Ensure the component meets RoHS standards if required by your design specifications before finalizing procurement.

Selection Notes

Select this component for circuits requiring compact dual-transistor configurations. Verify that the 20 V drain-to-source voltage and 4.5 A continuous current ratings align with your load requirements. Consider the 2.5V drive compatibility for logic-level control interfaces. Evaluate thermal management needs given the 0.9 W power dissipation limit.

Part Context

This component belongs to the VEC series of N-channel MOSFETs from SANYO Semiconductor. It utilizes a composite structure to achieve low ON-resistance within a small footprint. The device is intended for general-purpose switching tasks where space efficiency and fast switching speeds are prioritized over high-voltage handling capabilities.