VEC2616-TL-H-Z-W

VEC2616-TL-H-Z-W

$0.24
  • Description:MOSFET N/P-CH 60V 3A SOT28
  • Series:-

SKU:008c1880250f Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 60V 3A SOT28
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:3A (Ta), 2.5A (Ta)
  • Rds On (Max) @ Id, Vgs:80mOhm @ 1.5A, 10V, 137mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id:2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:10nC @ 10V, 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:505pF @ 20V
  • Power - Max:1W (Ta)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SMD, Flat Leads
  • Supplier Device Package:SOT-28FL/VEC8
  • Grade:-
  • Qualification:-

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VEC2616-TL-H-Z-W

Overview

The VEC2616-TL-H-Z-W is a dual MOSFET array from onsemi, featuring one N-channel and one P-channel device in an SOT-28FL package. It supports a drain-source voltage of 60V for both channels. The N-channel configuration provides a continuous drain current of 3A at Ta, while the P-channel offers 2.5A at Ta. Both devices are rated for 1W power dissipation at Ta. This component belongs to the 4V Drive Series, designed for low-voltage logic compatibility.

Feature Summary

  • Dual configuration integrating N-channel and P-channel MOSFETs within a single compact package
  • Optimized for 4V drive series applications ensuring compatibility with low-voltage logic signals
  • Supports high current density with 3A N-channel and 2.5A P-channel ratings

Applications

  • Low-side and high-side switching circuits
  • Power management modules requiring compact dual-FET solutions
  • Logic-level interface circuits for low-voltage systems

Procurement Notes

Verify part status carefully as distribution sources indicate this specific suffix may be obsolete. Confirm exact package marking and manufacturer lot codes upon receipt. Ensure storage conditions comply with moisture sensitivity levels for leadless packages. Cross-reference datasheet revisions to confirm electrical characteristics match design requirements before finalizing procurement orders.

Selection Notes

Select this component when space constraints require a dual FET solution in an SOT-28FL footprint. It is suitable for designs needing 60V blocking capability with moderate current loads. Consider thermal performance limits of 1W dissipation in enclosed environments. Verify that the 4V drive threshold aligns with the system's control logic voltage levels to ensure full enhancement.

Part Context

This part belongs to onsemi's discrete MOSFET array family, specifically targeting applications where board space is limited but dual switching functionality is required. The integration of complementary N and P channels simplifies bill-of-materials and assembly processes compared to using separate discrete components.

Replacement Considerations

Check for direct substitutes within the same 60V dual MOSFET array category. Verify pinout compatibility and thermal resistance values if replacing with alternative manufacturers' parts. Ensure replacement devices meet or exceed the 3A/2.5A current ratings and 60V voltage specifications.

VEC2616-TL-H-Z-WVEC2616-TL-H-Z-W
$0.24
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