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The VEC2616-TL-H-Z-W is a dual MOSFET array from onsemi, featuring one N-channel and one P-channel device in an SOT-28FL package. It supports a drain-source voltage of 60V for both channels. The N-channel configuration provides a continuous drain current of 3A at Ta, while the P-channel offers 2.5A at Ta. Both devices are rated for 1W power dissipation at Ta. This component belongs to the 4V Drive Series, designed for low-voltage logic compatibility.
Verify part status carefully as distribution sources indicate this specific suffix may be obsolete. Confirm exact package marking and manufacturer lot codes upon receipt. Ensure storage conditions comply with moisture sensitivity levels for leadless packages. Cross-reference datasheet revisions to confirm electrical characteristics match design requirements before finalizing procurement orders.
Select this component when space constraints require a dual FET solution in an SOT-28FL footprint. It is suitable for designs needing 60V blocking capability with moderate current loads. Consider thermal performance limits of 1W dissipation in enclosed environments. Verify that the 4V drive threshold aligns with the system's control logic voltage levels to ensure full enhancement.
This part belongs to onsemi's discrete MOSFET array family, specifically targeting applications where board space is limited but dual switching functionality is required. The integration of complementary N and P channels simplifies bill-of-materials and assembly processes compared to using separate discrete components.
Check for direct substitutes within the same 60V dual MOSFET array category. Verify pinout compatibility and thermal resistance values if replacing with alternative manufacturers' parts. Ensure replacement devices meet or exceed the 3A/2.5A current ratings and 60V voltage specifications.