VEC2616-TL-H-Z

Description：MOSFET N/P-CH 60V 3A/2.5A SOT28
Series：-

SKU:52fb206e5a8e Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 60V 3A/2.5A SOT28
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：3A, 2.5A
Rds On (Max) @ Id, Vgs：80mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：505pF @ 20V
Power - Max：1W
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：8-SMD, Flat Leads
Supplier Device Package：SOT-28FL/VEC8
Grade：-
Qualification：-

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VEC2616-TL-H-Z

Overview

The VEC2616-TL-H-Z is a complementary Power MOSFET manufactured by onsemi, utilizing trench technology to minimize gate charge and on-resistance. It integrates an N-Channel and P-Channel device in an SOT-28FL (VEC8) package with eight pins. The N-Channel variant supports a drain-source voltage of 60 V and a continuous current of 3 A, with a maximum RDS(on) of 80 mΩ at VGS=10V. The P-Channel variant handles -60 V and -2.5 A, featuring a maximum RDS(on) of 137 mΩ at VGS=-10V. Both channels are designed for low-profile applications and include ESD-protected gates.

Feature Summary

Complementary N-Channel and P-Channel configuration within a single low-profile package
Trench technology implementation for minimized gate charge and low on-resistance
ESD-protected gate structure for enhanced reliability
Optimized for 4V drive requirements

Applications

Motor Driver circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The datasheet lists VEC2616-TL-H as available in Tape & Reel format. Confirm that the Z suffix does not alter the electrical characteristics or pinout defined in the standard specification.

Selection Notes

Select this component for designs requiring a matched complementary pair in a compact footprint. Ensure the driving circuit can support the specified 4V and 10V gate thresholds. Verify thermal management capabilities, as power dissipation ratings depend heavily on the PCB substrate area.

Part Context

This device belongs to the VEC8 family of complementary MOSFETs from onsemi. It is part of a series designed for general-purpose switching applications where space constraints and low drive power are critical factors. The trench process technology distinguishes it from older planar devices.

Replacement Considerations

Direct substitutes include other complementary MOSFETs in the SOT-28FL/VEC8 package with similar voltage and current ratings. Check datasheets for matching RDS(on) values and pin configurations to ensure compatibility without redesigning the footprint.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.