VMM1000-01P

Description：MOSFET 2N-CH 100V 1000A Y3-LI
Series：-

SKU:ac4769b11764 Category: FET, MOSFET Arrays Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 100V 1000A Y3-LI
Series：-
Mfr：IXYS
Package：Box
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：1000A
Rds On (Max) @ Id, Vgs：1.2mOhm @ 800A, 10V
Vgs(th) (Max) @ Id：4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：2355nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Y3-Li
Supplier Device Package：Y3-Li
Grade：-
Qualification：-

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VMM1000-01P

Overview

The IXYS VMM1000-01P is a dual trench MOSFET module in a phase-leg configuration. It features a drain-source voltage (VDSS) of 100 V and a continuous drain current (ID25) of 1000 A at 25°C case temperature. The typical on-state resistance (RDSon) is 0.75 mΩ at VGS = 10 V. The module includes an optimized intrinsic reverse diode with a forward voltage of 1.0 V at 500 A. Thermal characteristics include a junction-to-case thermal resistance (RthJC) of 0.06 K/W. The device supports a maximum junction temperature (TVJ) of +175°C and utilizes screw connections for high-current main terminals.

Feature Summary

Dual Trench MOSFET technology providing low on-state resistance
Optimized intrinsic reverse diode for efficient commutation
Low inductive current path design for high-power applications
Kelvin source terminals facilitate easy gate drive connection

Applications

Main and auxiliary AC drives of electric vehicles
4 quadrant DC drives
Power supplies with low input voltage from fuel cells or solar cells

Procurement Notes

Verify the component status as the datasheet indicates preliminary data and phase-out status. Confirm that external leads provide additional current limitation beyond the rated values. Ensure mounting torque adheres to the specified range of 2.25 - 2.75 Nm for M6 screws. Check compatibility with recommended keyed twin plugs for auxiliary terminals if required by the design.

Selection Notes

Select this module for high-density converters requiring 100 V rating and currents up to 1000 A. Consider the low RthJC of 0.06 K/W for effective thermal management. Verify that the system can accommodate the large physical dimensions and weight of 250 g. Ensure the gate drive circuit supports the total gate charge of 2355 nC and the specified switching times.

Part Context

This component belongs to the VMM series of dual trench MOSFET modules manufactured by IXYS. It is designed for high-current, low-voltage applications where efficiency and power density are critical. The phase-leg configuration integrates two MOSFETs and their associated diodes into a single package, simplifying assembly for bridge circuits.