ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 680A Y3-LI
- Series：HiPerFET™
- Mfr：IXYS
- Package：Box
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：680A
- Rds On (Max) @ Id, Vgs：2.2mOhm @ 500A, 10V
- Vgs(th) (Max) @ Id：4V @ 30mA
- Gate Charge (Qg) (Max) @ Vgs：1440nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Y3-Li
- Supplier Device Package：Y3-Li
- Grade：-
- Qualification：-
Download product information
Overview
The VMM650-01F is a high-voltage power semiconductor module manufactured by IXYS. It utilizes Direct Copper Bond (DCB) substrate technology on copper chips to ensure robust thermal management and electrical isolation. The device provides an electrical isolation rating of 4000V, supporting high blocking voltage capabilities suitable for demanding power conversion environments. Designed for high-frequency operation, the module features an isolated mounting surface to facilitate secure installation in industrial applications.
Feature Summary
- Direct Copper Bond (DCB) substrate construction on copper chips for enhanced thermal conductivity
- High blocking voltage capability designed for high-power applications
- 4000V electrical isolation rating ensuring safety in high-voltage circuits
- Optimized for high-frequency operation with low gate drive requirements
Applications
- Uninterruptible Power Supply (UPS) systems
- Industrial motor drives
- High-voltage power conversion units
Procurement Notes
Verify the manufacturer datasheet to confirm specific pin configurations and thermal resistance values before integration. Ensure that the selected heat sink matches the module's isolated mounting surface requirements. Cross-reference the part number with official IXYS documentation to validate current availability and technical specifications against legacy components.
Selection Notes
Select this component when high voltage isolation and high-frequency switching are required. The DCB technology makes it suitable for applications needing efficient heat dissipation. Consider the 4000V isolation rating for safety compliance in industrial settings. Evaluate the low gate drive requirement to simplify driver circuit design compared to other high-voltage alternatives.
Part Context
IXYS is a power semiconductor company known for MOSFETs and IGBTs. The VMM650-01F belongs to their high-voltage module lineup, leveraging DCB technology. This series supports applications requiring reliable performance in harsh environments, aligning with IXYS' focus on high-quality, innovative semiconductor solutions for power conversion.
Replacement Considerations
Consult official IXYS substitution guides or distributor cross-reference lists for verified equivalent part numbers. Do not assume functional compatibility based solely on package dimensions or voltage ratings without verifying internal topology and thermal characteristics.
