VMM85-02F

VMM85-02F

  • Description:MOSFET 2N-CH 200V 84A Y4-M6
  • Series:HiPerFET™

SKU:7fc08b3947d2 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 200V 84A Y4-M6
  • Series:HiPerFET™
  • Mfr:IXYS
  • Package:Box
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):200V
  • Current - Continuous Drain (Id) @ 25°C:84A
  • Rds On (Max) @ Id, Vgs:25mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs:450nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:15000pF @ 25V
  • Power - Max:370W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Y4-M6
  • Supplier Device Package:Y4-M6
  • Grade:-
  • Qualification:-

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VMM85-02F

Overview

The VMM85-02F is a dual power HiPerFET module containing two N-channel MOSFETs in a phase-leg configuration. It features a 200V drain-source voltage rating and an 84A continuous drain current at 25°C case temperature. The maximum on-state resistance is 25 milliohms, with a gate threshold voltage of 4V. The device utilizes direct copper bonded alumina ceramic for thermal management and includes Kelvin source contacts.

Feature Summary

  • Dual MOSFETs integrated in a phase-leg configuration
  • Direct copper bonded Al2O3 ceramic base plate
  • Kelvin source contact for high-speed switching
  • Isolation voltage rated at 3600 volts

Applications

  • Switched-mode power supplies
  • Resonant-mode power supplies
  • Uninterruptible power supplies

Procurement Notes

Verify the component against the official IXYS datasheet to confirm pinout alignment and electrical ratings. Ensure mounting torque specifications are strictly followed during installation to maintain mechanical integrity and thermal performance. Confirm that the isolation voltage requirements match the specific application environment before finalizing procurement.

Selection Notes

Select this module when a compact phase-leg solution is required for high-power density applications. The low package inductance supports high-speed switching operations. Evaluate the thermal resistance characteristics to ensure adequate heatsinking is provided for the intended operating conditions.

Part Context

This component belongs to the HiPerFET family utilizing HDMOS technology. It is designed for efficiency and reduced energy consumption. The international standard package facilitates easy mounting using two screws, contributing to space and weight savings in electronic designs.

Replacement Considerations

No verified substitute part numbers are documented in the available public data.

VMM85-02FVMM85-02F

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