VMMK-1225-BLKG

VMMK-1225-BLKG

  • Description:RF MOSFET E-PHEMT 2V 0402
  • Series:-

SKU:86651c558ae0 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET E-PHEMT 2V 0402
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Strip
  • Technology:E-pHEMT
  • Frequency:12GHz
  • Gain:11dB
  • Voltage - Test:2 V
  • Current Rating (Amps):50mA
  • Noise Figure:1dB
  • Current - Test:20 mA
  • Power - Output:8dBm
  • Voltage - Rated:5 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:0402 (1005 Metric)
  • Supplier Device Package:402
  • Configuration:-

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VMMK-1225-BLKG

Overview

The VMMK-1225-BLKG is a low noise E-pHEMT amplifier from Broadcom Limited, operating across a frequency range of DC to 26.5 GHz. It utilizes a GaAsCap wafer scale sub-miniature leadless package measuring 1mm x 0.5mm x 0.25mm. The device operates on a single positive DC power supply with typical specifications at 12 GHz including an associated gain of 11 dB, a minimum noise figure (Fmin) of 0.87 dB, and an output third-order intercept point (OIP3) of +23 dBm. Absolute maximum ratings include a drain-source voltage of 5V and total power dissipation of 250 mW.

Feature Summary

  • Enhancement mode pHEMT technology eliminates the need for negative gate bias voltages
  • Wafer scale sub-miniature leadless package enables standard 0402 pick and place assembly
  • Ultra-low noise figure performance below 1dB from 500 MHz to 12 GHz
  • High linearity exceeding 22 dBm output third order intercept point

Applications

  • 2.4 GHz, 3.5GHz, and 5-6GHz WLAN and WiMax notebook computer applications
  • DBS 10 to 13 GHz receivers
  • VSAT and SATCOM 13 to 18 GHz systems
  • 802.16 & 802.20 BWA systems
  • WLL and MMDS Transceivers

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific environmental certifications required by your region. Ensure proper electrostatic discharge handling protocols are followed during storage and installation due to the sensitivity of the semiconductor materials used in this device.

Selection Notes

Evaluate the requirement for enhancement mode operation to simplify biasing circuitry compared to depletion mode alternatives. Consider the ultra-thin profile and small footprint when designing high-density PCB layouts. Verify that the available positive DC supply voltages align with the device's operational requirements for optimal noise figure and gain performance across the target frequency band.

Part Context

This component belongs to the VMMK series of low noise amplifiers manufactured using advanced E-pHEMT technology. It represents a transition toward smaller form factors while maintaining high-frequency performance capabilities up to 26.5 GHz. The product line focuses on integrating RF functionality into compact packages suitable for modern wireless communication standards.

Replacement Considerations

VMMK-1225-TR1G serves as an alternative packaging variant containing 5000 devices on a 7-inch reel instead of the bulk antistatic bag configuration.

VMMK-1225-BLKGVMMK-1225-BLKG

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