VMMK-1225-TR1G

Overview

The VMMK-1225-TR1G is a low noise E-PHEMT device operating from DC to 26.5 GHz, housed in a sub-miniature 0402 (1mm x 0.5mm) leadless package with a height of 0.25 mm. It utilizes 0.25 micron gate technology to achieve an ultra-low noise figure below 1 dB from 500 MHz to 12 GHz. The component provides high dynamic range and associated gain of up to 12.2 dB at 12 GHz. Key electrical specifications include a minimum noise figure (Fmin) of 0.87 dB, an output third-order intercept point (OIP3) of +23 dBm, and a 1 dB compressed output power (P1dB) of +8 dBm. It requires only positive DC voltages for bias.

Feature Summary

• Enhancement mode operation eliminates the need for negative gate bias voltage
• Wafer scale sub-miniature leadless package compatible with standard pick and place assembly
• Flat transconductance over bias and frequency ensures excellent linearity

Applications

• WLAN and WiMax notebook computer, access point and mobile wireless applications
• DBS 10 to 13 GHz receivers
• VSAT and SATCOM 13 to 18 GHz systems
• General purpose discrete E-pHEMT for other ultra low noise applications

Procurement Notes

Verify the specific ordering suffix to confirm packaging configuration. The -TR1G suffix indicates tape and reel packaging containing 5000 devices on a 7-inch reel. Confirm that the procurement channel sources directly from authorized distributors to ensure authenticity and proper handling of electrostatic sensitive devices.

Selection Notes

Select this component for designs requiring ultra-wideband performance up to 26.5 GHz within a constrained footprint. The enhancement mode architecture simplifies circuit design by removing the requirement for negative gate bias supplies. Ensure the application can accommodate the specified thermal resistance and maximum channel temperature limits during operation.

Part Context

This part belongs to the VMMK series of low noise amplifiers manufactured using Avago's E-pHEMT technology. The series integrates industry-leading semiconductor processes with a revolutionary chip-scale package design. This specific model represents a discrete transistor optimized for high gain and low noise across microwave frequencies.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

Does the VMMK-1225 require a negative gate bias voltage?

No, the device is an enhancement mode pHEMT that is normally off and does not require a negative gate bias voltage.

What is the maximum RF input power the device can handle?

The absolute maximum rating for pin RF CW input power is +10 dBm, provided the gate current is limited to 1 mA.

How is the device packaged for surface mount assembly?

It is housed in a wafer scale sub-miniature leadless package measuring 1mm x 0.5mm x 0.25mm, compatible with standard 0402 pick and place assembly.