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Product Detailed Parameters
- Description：MOSFET N-CH
- Series：*
- Mfr：Siliconix
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The VN0606M is a single N-channel enhancement mode MOSFET manufactured by Microchip Technology, formerly Siliconix. It utilizes TrenchFET technology to achieve low on-resistance and fast switching speeds within a compact PowerPAK 1212-8 surface-mount package. The device features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 330 mA. With a maximum gate-source voltage of ±30 V and a power dissipation capability of 1 W, it operates reliably across an extended temperature range from -55°C to +150°C junction temperature.
Feature Summary
- TrenchFET technology provides optimized on-resistance for efficient power handling
- PowerPAK 1212-8 package enables high-density surface-mount assembly
- Enhanced thermal performance supports operation up to 150°C junction temperature
Applications
- Low-side load switching in portable electronics
- Relay driver circuits requiring compact form factors
- High-speed line drivers for signal integrity applications
Procurement Notes
Verify the specific suffix against the official datasheet to confirm pinout and electrical tolerances. Confirm RoHS compliance status through the manufacturer's documentation. Check for obsolescence notices as component availability may vary. Ensure the ordering part number matches the required package variant for PCB layout compatibility.
Selection Notes
Select this component when a small footprint N-channel MOSFET with 60V rating is required. Compare Rds(on) at your specific gate drive voltage against application requirements. Verify that the 330mA continuous current limit meets the load demands. Consider the thermal resistance of the PowerPAK package for heat dissipation needs in enclosed designs.
Part Context
This component belongs to the VN0606 series of low-voltage MOSFETs designed for space-constrained applications. The series leverages TrenchFET technology to balance switching speed and conduction losses. It serves as a drop-in replacement for older discrete packages where board real estate is limited, offering improved thermal characteristics compared to traditional SOT-23 alternatives.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Consult the manufacturer's cross-reference guide for verified equivalents.
