VN10KN3-G-P014

$0.46

Description：MOSFET N-CH 60V 310MA TO92-3
Series：-
Mfr：Microchip Technology
Package：Tape & Box (TB)

SKU:bc84412c4332 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

VN10KN3-G-P014 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 60V 310MA TO92-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for VN10KN3-G-P014

Description：MOSFET N-CH 60V 310MA TO92-3
Series：-
Mfr：Microchip Technology
Package：Tape & Box (TB)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：310mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：60 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92-3
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Single FETs, MOSFETs datasheet and documents for VN10KN3-G-P014

VN10KN3-G-P014

Single FETs, MOSFETs Overview

The VN10KN3-G-P014 is an N-Channel Enhancement-Mode Vertical DMOS FET manufactured by Microchip Technology. It utilizes a silicon-gate manufacturing process to deliver high input impedance and positive temperature coefficients, ensuring thermal stability without secondary breakdown. The device features a 60 V drain-to-source breakdown voltage (BVDSS) and a gate-to-source voltage rating of ±30 V. Continuous drain current (ID) reaches 310 mA in the TO-92-3 package, with a maximum power dissipation of 1 W at 25°C ambient temperature. On-state resistance (RDS(ON)) is specified at 7.5 Ω at VGS = 5V and ID = 200 mA. Operating temperatures range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Vertical DMOS structure provides high input impedance and eliminates thermal runaway risks.
Integral source-drain diode supports specific switching and amplifying applications.
Positive temperature coefficient ensures ease of paralleling for higher current handling.

Single FETs, MOSFETs Applications

Motor controls
Power supply circuits
Drivers for relays, solenoids, and lamps

Single FETs, MOSFETs Procurement Notes

Verify the ordering suffix P014 corresponds to the 2000-unit AMMO Pack configuration as defined in the product identification system. Confirm RoHS compliance and lead-free status via the G designation. Ensure the procurement channel sources directly from authorized Microchip distributors to guarantee component authenticity and traceability.

Single FETs, MOSFETs Selection Notes

Select this component when low threshold voltage and fast switching speeds are required alongside high breakdown voltage. The vertical DMOS architecture suits designs needing high gain and low CISS. Verify that the 7.5 Ω RDS(ON) meets the specific load requirements for the intended switching frequency and duty cycle within the allowed thermal limits.

Single FETs, MOSFETs Part Context

This part belongs to the VN10K family of N-Channel Enhancement-Mode Vertical DMOS FETs. The family combines bipolar-like power handling with MOSFET characteristics. The VN10KN3-G-P014 specifically denotes the TO-92-3 package variant supplied in AMMO packaging, distinct from reel or bag configurations found in other suffixes.