VN3205N3-G

Single FETs, MOSFETs Overview

The VN3205N3-G is an N-Channel Enhancement-Mode Vertical DMOS FET manufactured by Microchip Technology. It features a drain-to-source breakdown voltage of 50 V and a gate-to-source voltage rating of ±20 V. The device supports a continuous on-state drain current of 1.2 A in the TO-92 package, with a maximum static drain-to-source on-state resistance of 0.45 Ω at VGS = 4.5 V. Operating temperatures range from -55°C to +150°C, with a power dissipation capacity of 1 W.

Single FETs, MOSFETs Feature Summary

• Vertical DMOS structure provides high input impedance and positive temperature coefficient characteristics.
• Integral source-drain diode enables freewheeling capabilities without external components.
• Fast switching speeds combined with low input capacitance for efficient drive requirements.
• Thermal stability ensures freedom from secondary breakdown and thermal runaway.

Single FETs, MOSFETs Applications

• Motor controls
• Power supply circuits
• Drivers for relays, solenoids, and lamps

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'P013' against official documentation to confirm packaging details, as standard ordering examples indicate 'N3' packages may be supplied in bags or reels. Confirm RoHS compliance status via the manufacturer's datasheet revision history. Ensure the procurement channel sources directly from authorized distributors to guarantee authenticity and traceability for this discontinued component.

Single FETs, MOSFETs Selection Notes

Select the VN3205N3-G when a through-hole N-channel MOSFET with 50 V breakdown is required. The TO-92 package limits continuous current to 1.2 A; higher current applications require the SOT-89 variant. Verify that the gate threshold voltage aligns with the control logic levels. Consider the thermal resistance of the TO-92 package for heat dissipation calculations in enclosed environments.

Single FETs, MOSFETs Part Context

This component belongs to the VN3205 family of vertical DMOS FETs. The 'N3' designation specifically identifies the 3-lead TO-92 through-hole package configuration. Other variants in the series include the SOT-89 surface-mount version (VN3205N8-G). The device utilizes silicon-gate manufacturing processes to achieve performance comparable to bipolar transistors while maintaining MOS advantages.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.