VP2206N3-G-P003

Single FETs, MOSFETs Overview

The VP2206N3-G-P003 is a P-Channel Enhancement-Mode Vertical DMOS FET manufactured by Microchip Technology. It features a TO-92-3 package with through-hole mounting. Key electrical parameters include a drain-to-source breakdown voltage of -60 V, a maximum on-state drain current of -4.0 A at VGS = -10V, and a static drain-to-source on-state resistance of 0.9 Ω. The gate-to-source voltage rating is ±20 V. The device operates within a temperature range of -55°C to +150°C and has a power dissipation capability of 1 W in the TO-92 package.

Single FETs, MOSFETs Feature Summary

• Vertical DMOS structure providing high input impedance and fast switching speeds
• Free from thermal runaway and thermally-induced secondary breakdown
• Integral source-to-drain diode for simplified circuit design
• Positive temperature coefficient inherent in MOS devices for ease of paralleling

Single FETs, MOSFETs Applications

• Motor controls
• Power supply circuits
• Drivers for relays, solenoids, and lamps
• Converters and amplifiers

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix (P003) corresponds to the required tape-and-reel packaging configuration. Confirm that the TO-92 package variant meets the thermal management requirements for the intended application, as power dissipation differs significantly between TO-92 and TO-39 packages. Ensure compatibility with lead-free manufacturing processes if RoHS compliance is mandatory for the production line.

Single FETs, MOSFETs Selection Notes

Select this component when a P-Channel enhancement-mode switch with low on-resistance and high input impedance is required. The TO-92 package is suitable for applications where space is limited but higher current handling than standard small-signal transistors is needed. Consider the -60 V breakdown voltage limit and the 0.9 Ω on-state resistance for efficiency calculations in low-voltage switching scenarios.

Single FETs, MOSFETs Part Context

This part belongs to the VP2206 series of P-Channel Vertical DMOS FETs originally developed by Supertex Inc., now part of Microchip Technology. The series includes variants with different package options such as TO-39 and TO-92. The N3 designation indicates the TO-92 package style, while the P003 suffix specifies the reel packing method. These devices are designed for general-purpose switching and amplifying applications.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other parts from the VP2206 family with compatible packages, such as VP2206N2-G for TO-39 or VP2206N3-G for bulk TO-92. Verify pinout compatibility and ensure that alternative components meet or exceed the -60 V breakdown voltage and 0.9 Ω on-resistance specifications.