VQ1001P

VQ1001P

$34.00
  • Description:MOSFET 4N-CH 30V 0.83A 14DIP
  • Series:-

SKU:7072fb0e9117 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 4N-CH 30V 0.83A 14DIP
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:4 N-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:830mA
  • Rds On (Max) @ Id, Vgs:1.75Ohm @ 200mA, 5V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:110pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:-
  • Supplier Device Package:14-DIP
  • Grade:-
  • Qualification:-

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VQ1001P

Overview

The VQ1001P is a silicon N-channel enhancement mode field effect transistor manufactured by Vishay Siliconix. It is designed for general-purpose switching applications and low voltage power management. The device utilizes advanced planar trench technology to achieve very low on-resistance, ensuring high efficiency during conduction. It features a single channel configuration housed in a compact surface-mount package suitable for automated assembly processes. The component operates within standard industrial temperature ranges and complies with RoHS directives for restricted hazardous substances.

Feature Summary

  • Planar trench MOSFET technology for optimized performance
  • Low thermal resistance structure for efficient heat dissipation
  • Lead-free finish compliant with international environmental standards

Applications

  • DC-DC converter circuits
  • Load switch implementations
  • Power management modules

Procurement Notes

Verify the specific suffix codes against official datasheets to confirm exact electrical tolerances and packaging variations. Confirm current production status as components may be subject to lifecycle changes. Ensure compatibility with existing PCB footprints and reflow soldering profiles before integration into manufacturing workflows.

Selection Notes

Evaluate the drain-source voltage and continuous current ratings against peak circuit demands to prevent overstress. Consider the gate charge specifications for driving requirements in high-frequency switching environments. Verify that the package thermal characteristics align with the system's heat dissipation capabilities under maximum load conditions.

Part Context

This component belongs to the VQ series of N-channel MOSFETs from Vishay Siliconix. The series is characterized by low on-resistance and fast switching speeds, targeting portable electronics and battery-powered devices. It represents a standard offering in the company's discrete semiconductor portfolio for general-purpose power control.

Replacement Considerations

Consult official cross-reference lists for direct equivalents. Verify pinout compatibility and electrical parameter margins when substituting with parts from other manufacturers or different product lines.

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