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The VQ1006P-2 is a Vishay Siliconix N-channel MOSFET from the VQ1006P series, designed for high-voltage switching applications. It features a 90V drain-source breakdown voltage (V(BR)DSS) and operates in enhancement mode. The device utilizes silicon technology and is housed in a PDIP-SB-14 through-hole package. As an end-of-life product, it is no longer actively manufactured or distributed by major retailers.
This component is officially classified as End of Life (EOL). Verification should focus on historical datasheets and discontinuance notices rather than current availability. Sourcing requires checking secondary market distributors for remaining stock or evaluating qualified replacement parts that meet identical electrical and mechanical specifications.
Select this part only if legacy design compatibility is mandatory. Verify that the 90V rating and PDIP-SB-14 footprint match the target circuit requirements. For new designs, consider modern equivalents with improved thermal performance or RoHS compliance, as this specific suffix indicates older manufacturing standards.
The VQ1006P-2 belongs to the VN0808L/LS and VQ1006P family of N-channel MOSFETs produced by Vishay Siliconix. This series was engineered for robust performance in automotive and industrial environments. The 'VQ' prefix typically denotes specific packaging or processing variations within the broader MOSFET portfolio.
Direct substitutes are not explicitly listed in public documentation. Evaluate other Vishay N-channel MOSFETs with similar 90V ratings and through-hole packages. Ensure pinout compatibility and verify that thermal characteristics align with the original application constraints.