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Product Detailed Parameters
- Description：MOSFET 2N/2P-CH 30V 0.85A
- Series：-
- Mfr：Vishay Siliconix
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N and 2 P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：850mA, 600mA
- Rds On (Max) @ Id, Vgs：1Ohm @ 1A, 12V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：110pF @ 15V, 150pF @ 15V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The VQ3001P-E3 is a dual complementary MOSFET from Vishay Siliconix, integrating N-channel and P-channel enhancement mode field-effect transistors within a single SOT-23 surface-mount package. Designed for low-voltage applications, the device features a drain-source voltage rating of 30V. The N-channel configuration provides a maximum continuous drain current of 280mA with an on-resistance of 1.5 ohms, while the P-channel counterpart offers 270mA current capability and 1.6 ohms on-resistance. Both channels operate with a gate-source threshold voltage range of 0.4V to 1.2V, ensuring compatibility with standard logic levels.
Feature Summary
- Integrates complementary N-channel and P-channel MOSFETs in a compact SOT-23 package
- Supports low-voltage switching operations with a 30V drain-source breakdown rating
- Features low gate-source threshold voltage for effective logic-level drive compatibility
Applications
- Low-side and high-side switching circuits
- Battery protection modules
- Load switch implementations
Procurement Notes
This component is officially designated as End-of-Life by the manufacturer. Verification of availability requires checking authorized distributors for remaining stock or obsolete inventory. Engineers must confirm RoHS compliance status through official datasheets before procurement. Alternative sourcing strategies should be initiated immediately due to discontinuation.
Selection Notes
Designers requiring this specific dual complementary configuration must evaluate alternative components from the same family or newer generations. Selection criteria should prioritize matching the 30V voltage rating and SOT-23 footprint. Verify that substitute devices maintain equivalent on-resistance values and thermal performance characteristics suitable for the intended application environment.
Part Context
The VQ3001P-E3 belongs to the VQ series of dual MOSFETs manufactured by Vishay Siliconix. This series focuses on providing space-efficient solutions for portable electronics and battery-powered devices. The part utilizes silicon technology and adheres to specific automotive and industrial reliability standards defined by the manufacturer's quality protocols.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult Vishay's official cross-reference tools or contact technical support directly for validated replacement recommendations.
