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The VRF141 is an N-channel RF MOSFET transistor manufactured by Microchip Technology. It utilizes silicon technology and operates at a frequency of 175 MHz. The device provides a continuous drain current of 20 A and features a drain-source breakdown voltage of 80 V. It delivers an output power of 150 W with a gain of 22 dB. The component supports a wide operating temperature range from -65°C to +150°C and uses a screw mount installation style.
Verify the specific datasheet revision and package dimensions before integration. Confirm that the screw mount interface matches the mechanical design constraints. Ensure thermal management solutions accommodate the maximum operating temperature limits defined in the official specifications. Cross-reference the pinout configuration with the circuit schematic to prevent connection errors during assembly.
Select this component when high output power and moderate gain are required at 175 MHz. The 80 V breakdown voltage suits specific biasing requirements. Consider the screw mount package for mechanical stability in high-power environments. Evaluate thermal dissipation needs against the -65°C to +150°C operational range to ensure reliability under varying environmental conditions.
This part belongs to the RF MOSFET Transistors category within Microchip's semiconductor portfolio. It is designed for radio frequency applications requiring significant power handling. The device represents a specialized solution for engineers needing discrete RF power amplification components with established silicon-based performance characteristics.
Consult official Microchip documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' RF MOSFETs without detailed parameter matching.