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The VRF151MP is an N-Channel RF MOSFET transistor manufactured by Microchip Technology. It utilizes Silicon technology and operates at a frequency of 175 MHz. The device features a drain-source breakdown voltage (Vds) of 180 V and a continuous drain current (Id) of 16 A. It delivers an output power of 150 W with a gain of 22 dB. Designed for robust performance, it functions within a temperature range of -65°C to +150°C. The component is housed in the M174 package and supports screw mount installation.
Verify the specific revision level and manufacturing date code against the latest Microchip datasheet before procurement. Confirm that the M174 package dimensions align with your thermal management and mechanical mounting requirements. Ensure compatibility with the intended biasing network for optimal performance at 175 MHz. Check for any recent product change notifications regarding material composition or testing standards.
Select this component when designing circuits requiring 150 W output power at 175 MHz with 22 dB gain. The 180 V breakdown voltage provides sufficient headroom for standard RF power supply rails. Consider the screw mount style for effective heat dissipation given the high power density. Evaluate the 16 A continuous current rating against peak load conditions to ensure reliability within the specified temperature range.
This part belongs to the VRF series of RF MOSFET transistors from Microchip Technology. These devices are engineered for demanding radio frequency environments where high power handling and stable gain are critical. The M174 packaging indicates a specific footprint designed for efficient thermal transfer and mechanical stability in high-power amplifier modules.
Consult official Microchip documentation for verified substitute part numbers. Cross-referencing should focus on matching key electrical parameters such as output power, frequency range, and package type to ensure functional equivalence without redesign.