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The VRF152 is an N-channel RF MOSFET transistor manufactured by Microchip Technology. It utilizes silicon technology and operates at a frequency of 175 MHz. The device features a drain-source breakdown voltage of 130 V and delivers an output power of 150 W. Key electrical parameters include a continuous drain current of 20 A, a gain of 22 dB, and a forward transconductance minimum of 5 mS. The gate-source voltage rating is +40 V with a threshold voltage of 3.6 V. Power dissipation capacity is 300 W. It is housed in the M174 screw-mount package and supports an operating temperature range from -65 C to +150 C.
Verify the specific datasheet revision and manufacturing lot details upon order confirmation. Confirm that the M174 package mounting requirements align with your thermal management design. Ensure compliance with RoHS standards if required by your project specifications. Check for any product change notifications regarding assembly or wafer fab site changes before finalizing procurement.
Select this component when designing circuits requiring 150 W output power at 175 MHz. The 130 V breakdown voltage suits moderate voltage supply rails. Consider the 300 W power dissipation capability for heatsink sizing. Verify that the screw-mount installation method fits the mechanical constraints of the enclosure.
This part belongs to the Microchip VRF series of RF MOSFET transistors. These devices are engineered for robust performance in demanding radio frequency environments. The series offers various voltage and power configurations to support diverse amplifier designs. The M174 package provides a standardized interface for thermal and electrical connections.
Public confirmed substitute part numbers are not available in the provided documentation. Consult Microchip technical support for cross-reference recommendations based on specific circuit requirements.